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Thermal Conductivity of Sb2-xInxTe3 Single Crystals

Authors: Švanda Pavel | Drašar Čestmír | Lošťák Petr | Zhou Z | Dyck Jeffrey | Uher Ctirad

Year: 2004

Type of publication: ostatní - přednáška nebo poster

Name of source: Book of Proceedings

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Language	Name	Abstract	Keywords
cze	Tepelná vodivost monokrystalů Sb2-xInxTe3	Byly připraveny monokrystaly Sb2-xInxTe3 (x = 0.0; 0.1; 0.2 and 0.4). Byla změřena jejich tepelná vodivost a transportní vlastnosti. Výsledky měření byly diskutovány.
eng	Thermal Conductivity of Sb2-xInxTe3 Single Crystals	Sb2-xInxTe3 single crystals (x = 0.0; 0.1; 0.2 and 0.4) were prepared from the elements Sb, In, and Te of 5N purity by a modified Bridgman method. The obtained crystals were characterized by measurements of the temperature dependence of the electrical conductivity, Seebeck coefficient and thermal conductivity in the temperature range of 5-300 K. Subtracting the electronic component of thermal conductivity ke from the total thermal conductivity k we obtain the lattice thermal conductivity kL. At low temperatures, kL data up to 100 K can be fitted well using Debye model considering that phonons scatter on boundaries, point defects, charge carriers, and other phonons. ke was calculated from experimental values of resistivity r using Wiedemann-Franz relation ke = LT/r, where L is the Lorenz number and T is the absolute temperature. In order to evaluate the effect of the scattering mechanism on the magnitude of ke, the value of the Lorenz number was determined for various scattering mechanism (acoustic phonons, optical phonons, ionized impurities) and assuming that the studied crystals are degenerate semiconductors, thus L = L0 = (π2/3)(kB/e)2.