Publication detail

Nanostructuring of organic and chalcogenide resists by direct DUV laser beam writing

Authors: Glaser T. | Schroeter S. | Fehling S. | Poehlmann R. | Vlček Miroslav

Year: 2004

Type of publication: článek v odborném periodiku

Name of source: Electronics Letters

Publisher name: Institute of Electrical Engineers

Place: Velká Británie

Page from-to: 1-2

Titles:

Language	Name	Abstract	Keywords
cze	Nanostruktura organických a chalcogenidových resistů připravených metodou "direct DUV laser beam writing"	"Byly studovány vlastnosti organických a chalkogenidových resistů připravených metodou direct DUV laser beam writing"
eng	Nanostructuring of organic and chalcogenide resists by direct DUV laser beam writing	A direct writing DUV laser lithography system was used to write surface relief gratings into an organic positive DUV resist and into amorphous chalcogenide layers. For both material groups feature sizes down to 160 nm with aspect ratios of two and more were realised. The nanostructures in chalcogenide layers emerge directly during the writing process, without any development or etching process.	nanostructure;chalcogenide resist;laser beam;

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